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The NST857BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.
Features
NST857BDP6T5G Dual General Purpose Transistor
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(3) (2) (1)
* * * * * *
hFE, 220-475 Low VCE(sat), 0.3 V Simplifies Circuit Design Reduces Board Space Reduces Component Count This is a Pb-Free Device
Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC HBM MM ESD Class Value -45 -50 -6.0 -100 2 B Unit Vdc Vdc Vdc mAdc
Q1
Q2
(4)
(5) NST857BDP6T5G
(6)
MAXIMUM RATINGS
6
5
4
1
2
3
Electrostatic Discharge
THERMAL CHARACTERISTICS
Characteristic (Single Heated) Total Device Dissipation TA = 25C Derate above 25C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25C Derate above 25C (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Characteristic (Dual Heated) (Note 3) Total Device Dissipation TA = 25C Derate above 25C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25C Derate above 25C (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range Symbol PD RqJA PD RqJA Symbol PD RqJA PD RqJA TJ, Tstg Max 240 1.9 520 280 2.2 446 Max 350 2.8 357 420 3.4 297 -55 to +150 Unit mW mW/C C/W mW mW/C C/W Unit mW mW/C C/W
SOT-963 CASE 527AD PLASTIC
MARKING DIAGRAM
1
KMG G
K = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
mW mW/C C/W C Device NST857BDP6T5G Package SOT-963 (Pb-Free) Shipping 8000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR-4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels.
(c) Semiconductor Components Industries, LLC, 2008
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
April, 2008 - Rev. 0
1
Publication Order Number: NST857BDP6/D
NST857BDP6T5G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mA) Collector -Emitter Breakdown Voltage (IC = -10 mA, VEB = 0) Collector -Base Breakdown Voltage (IC = -10 mA) Emitter -Base Breakdown Voltage (IE = -1.0 mA) Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = -10 mA, VCE = -5.0 V) (IC = -2.0 mA, VCE = -5.0 V) Collector -Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base -Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base -Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) 0.18 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.0001 -55C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 25C 800 hFE, DC CURRENT GAIN (V) 700 600 500 400 300 200 100 25C (5.0 V) 25C (1.0 V) -55C (5.0 V) -55C (1.0 V) fT Cobo Cibo NF 100 - - - - - - - - 4.5 10 10 MHz pF pF dB hFE - - 220 - - - - -0.6 - 150 290 - - -0.7 -0.9 - - - 475 V -0.3 -0.7 V - - V -0.75 -0.82 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO -45 -50 -50 -5.0 - - - - - - - - - - - - -15 -4.0 V V V V nA mA Symbol Min Typ Max Unit
VCE(sat)
VBE(sat)
VBE(on)
IC/IB = 10 VCE(sat) = 150C
150C (5.0 V)
150C (1.0 V)
0 0.0001
0.001 0.01 IC, COLLECTOR CURRENT (A)
0.1
Figure 1. Collector Emitter Saturation Voltage vs. Collector Current
Figure 2. DC Current Gain vs. Collector Current
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NST857BDP6T5G
1.0 VBE(on), BASE-EMITTER TURN-ON VOLTAGE (V) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 150C 0.3 0.0001 0.001 0.01 25C IC/IB = 10 -55C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150C 0.3 0.0001 25C VCE = 2.0 V -55C
0.1
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs. Collector Current
1.0 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 10 mA 0.0001 0.001 0.01 30 mA 50 mA IC = 100 mA 10 Cibo, INPUT CAPACITANCE (pF) 9 8 7 6 5 4 3 0
Figure 4. Base Emitter Turn-On Voltage vs. Collector Current
Cib
1.0
2.0
3.0
4.0
5.0
Ib, BASE CURRENT (A)
Veb, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region
4.5 Cobo, OUTPUT CAPACITANCE (pF) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Cob
Figure 6. Input Capacitance
5
10
15
20
25
30
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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NST857BDP6T5G
PACKAGE DIMENSIONS
SOT-963 CASE 527AD-01 ISSUE B
D A B 4 E 12 e
6X
A
C L
6
5
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN 0.004 0.003 0.037 0.03 INCHES NOM MAX
3 C 0.08 C A B
HE
b
0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041
SOLDERING FOOTPRINT*
0.35 0.014 0.35 0.014
0.90 0.0354
0.20 0.08
0.20 0.08
SCALE 20:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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4
NST857BDP6/D

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